https://orcid.org/0000-0002-8400-613X
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Abstract
This paper presents a comprehensive overview of Gallium nitride (GaN)-based power amplifier (PA) design for various frequency bands. GaN-based technology has emerged as a promising alternative to traditional silicon-based amplifiers due to its superior performance characteristics, which are discussed in this paper. This paper also discusses the key design parameters and challenges associated with PA design. Various design techniques and topologies for GaN power amplifiers are explored besides addressing theoretical considerations of PA design along with a complete systematic design procedure for L-Band amplifier using the wolfspeed large signal GaN HEMT model. To further demonstrate the useful methodology, the designs of S-band and C-band PAs are also presented. GaN-based devices are very promising candidates for high-power applications. It is widely used in various high-power applications including communication and radar.
ACKNOWLEDGEMENTS
The authors would like to express gratitude to the Vice Chancellor DIAT for encouragement.
Disclosure statement
No potential conflict of interest was reported by the author(s).
Additional information
Notes on contributors
Ambudhi Shukla
Ambudhi Shukla received an Mtech in defence electronics systems from the Defence Institute of Advanced Technology, Pune, India in 2022 and a Btech in electronics instrumentation and control from Rajasthan Technical University, Kota in 2010. He is presently manager (design) (electrical and weapons) at Garden Reach Shipbuilders and Engineers Limited, Kolkata (A Ministry of Defence Undertaking). His work experience spans various assignments in warship design and shipbuilding associated with prestigious projects which include the P-28 Anti-submarine warfare corvette, landing Craft Utility, Fast patrol vessels, and the P17A Nilgiri class of ships. Currently, he is working in the R&D team for Autonomous Vehicles [surface and sub-surface] and green energy vessels [Electric and Hydrogen Fuel based], to the shipyard’s repertoire of products. Email: [email protected]
K. P. Ray
K P Ray FNAE is an Mtech in microwave electronics from the University of Delhi and PhD from the department of electrical engineering IIT, Bombay. He has over 38 years of research/academic experience in the areas of RF and microwave systems/components and was the programme director of SAMEER (MeitY) Mumbai and has executed over 55 projects sponsored by various Govt. agencies and industries. He received many awards including the most coveted IETE-Ram Lal Wadhwa Award 2018, IETE-Ranjna Pal Memorial Award 2014, and several research papers awards. He has published over 500 research papers with more than 8850 citations. Presently, he is a professor and head of the department of EE, DIAT (DRDO), Pune. Corresponding author. Email: [email protected]; [email protected]