Performance optimisation of n-i-p type CH₃NH₃PbI₃ based perovskite solar cells using SCAPS 1-D device simulation

Abstract

Perovskite solar cells (PSCs) are emerging photovoltaic technologies with an efficiency of over 25%. PEDOT:PSS is the most commonly used hole transport material in the p-i-n type perovskite solar cell because the PEDOT:PSS dispersion is typically water-based material. Water-free PEDOT:PSS composites are used in the n-i-p architecture. The inverted PEDOT:PSS-based PSCs show 200 mV less open circuit voltage (V_OC) as compared to conventional PSCs. Herein, the n-i-p type perovskite solar cell containing PEDOT:PSS as a hole transport layer is adopted to overcome the problem of open circuit voltage loss in an inverted solar cell. The design and analysis of n-i-p based perovskite solar cell is carried out using the 1D-Solar Cell Capacitance Simulator. The solar cell performance is improved by optimising the different parameters of perovskite solar cell. The optimised n-i-p structure solar cell has achieved the best power conversion efficiency of over 18% with 1.27 V open-circuit voltage for 350 nm thickness of the absorber layer. Therefore, the results provide a pathway to overcoming the voltage loss in PEDOT:PSS-based inverted PSCs by adopting a conventional device structure.

KEYWORDS:

• Perovskite solar cell
• Defect density
• Simulation
• SCAPS-1D
• Power conversion efficiency

Acknowledgements

Authors acknowledge the support of staff of SoS in Electronics and Photonics, Pt. Ravishankar Shukla University, Raipur for their support, valuable guidance and encouragement.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors.