Influence of Ara A on the Formation of Dicentrics in Irradiated Quiescent CHO Cells

Abstract

CHO K1-cells, arrested in G0/G1 phase were irradiated with graded doses of 150-kV X-rays, and the dicentric chromosome aberrations in the first metaphase after reincubation in full growth medium were evaluated. When 500 µm ara A was administered at least 1 h before irradiation, maximal enhancement of the dicentric yield was obtained under ‘immediate plating’ conditions as well as under ‘delayed plating’ conditions, and under both conditions only the linear component αD of the aberration yield was affected. Since ara A had no effect upon the number of induced dsbs, as measured with PFGE at doses up to 100 Gy, the action pathway of ara A is suggested to be the repair/misrepair process manifested in the linear component of the dicentric yield. By varying the time at which either ara A at 37°C was administered before irradiation or ara A at 4°C was added after irradiation, it was observed that the repair step sensitive to ara A was completed within about 5 min after irradiation. This is in agreement with other observations of ara A action upon a fast repair step. The conversion of DNA single-strand breaks or base damage sites into double-strand breaks as a consequence of polymerase β inhibition by ara A would explain the present results.