In situ crystallization of amorphous Sb₂Se₃ films at electron beam irradiation

Abstract

Amorphous films of Sb₂Se₃ were studied for crystallization under the action of electron irradiation. Electron microscopy studies demonstrated, that phase transformation is the island polymorphous crystallization mode with the relative length δ₀≈ 183 for a film with a thickness 25 nm and δ₀≈ 489 for a film with a thickness 40 nm. The dependence of the fraction of the crystalline phase on time has an exponential character, described by the JMAK formula. For films of both thicknesses numerical value of Avrami exponent nearest integer = 2.

Keywords:

• Amorphous state
• antimony selenide
• crystallization
• electron microscopy
• kinetics

Acknowledgments

The authors are grateful to A.Yu. Sipatov and N.A. Reznik for the helpful discussions and assistance in sample preparation and research, and M.A. Sokol for assistance in the design of the article.

Disclosure statement

No potential conflict of interest was reported by the author(s).