Abstract
The dependence of charge carrier mobility on the thickness of n-PbTe and n-PbS films, as well as on the n-PbTe/n-PbS heterostructure grown from the vapor phase on (111) BaF2, was studied. Particular attention was paid to aspects of effective mobility, calculated taking into account the influence of charge carrier scattering on the surface and on misfit dislocations, forming heterointerfaces in materials.
Disclosure statement
No potential conflict of interest was reported by the author(s).