An all-organic active pixel photosensor featuring ion-gel transistors

Figures & data

Figure 1. (a) PPS pixel and (b) two transistors APS layouts and (c) schematic illustration of the all-organic transistor and photosensor combination in APS architecture (only Taps is depicted).

Figure 2. IV characteristics of bulk heterojunction photosensors for different illuminations (EQE in inset).

Figure 3. (a) Output characteristics of an UV curable ion-gel OFET (b) Transfer characteristics of an ion-gel dielectric OFET at V_sd = −1 V showing minimal hysteresis and 1 µA maximum leakage current at expected operating voltages. V_g sweep rate was 100 mV s⁻¹.

Figure 4. Current I_aps for different photosensor reverse biases V_aps and T_reset gate voltages. The maximum I_aps current under dark conditions and 6 mW cm⁻² are, respectively, −40 nA and −3.5 µA.