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Abstract
The aim of this study was to investigate the effect of silicon (Si) on soybean seedlings under (combined) drought and ultraviolet-B (UV-B) radiation stresses. Specifically, we determined dry matter accumulation and partitioning of the mineral elements in different organs of soybean seedlings using the inductively coupled plasma mass spectrometry (ICP-MS). The amount of dry matter accumulated in root, stem, and leaf of seedlings treated with (combined) drought and UV-B radiation stresses were lower than that of the control. Also, the content of macroelements in seedlings under the combined stress was lower than in those under control conditions. Changes in the contents of microelements varied according to the intensity of drought, UV-B radiation, and the organs of soybean. The relationship between the contents of mineral elements and the accumulation of dry matter also varied similarly. These results demonstrated that drought and UV-B radiation induced an alteration in the distribution of mineral elements in root, stem and leaf, leading to decreases in dry matter accumulation and inhibition of soybean growth.