Design and Characterization of Eu²⁺/Ln³⁺ Co-doped SrAl₂Si₂O₈ Photostimulated Phosphors for Optical Information Storages

Abstract

In this paper, a series of Sr_0.96Al₂Si₂O₈ phosphors doped with 0.02Eu²⁺ and 0.02Re³⁺ (where Re = Tm, Dy, Er, Nd, Sm, La, Ho) were synthesized using the high-temperature solid-phase method at 1350 °C for 4 hours. The samples underwent characterization for structural and phase analysis using XRD-6000. Fluorescence and photostimulated properties were evaluated with F-4600. The pyroluminescence curve indicates a trap depth of 0.6-0.8 eV for Sr_0.96Al₂Si₂O₈: 0.02Eu²⁺, 0.02Re³⁺ (where Re = Dy, Er, Sm, La, Ho), making it suitable for prolonged afterglow luminescence. In comparison with deep trap material Sr_0.96Al₂Si₂O₈: 0.02Eu²⁺, 0.02Nd³⁺, the generated traps approach or exceed 1 eV, suggesting its potential for use as a light excitation and optical storage material. Additionally, the correlation between sample TL and PSL was examined, confirming that the augmentation of initial photostimulated luminescence intensity is closely associated with the generation of new traps. Furthermore, considering the effect of different trivalent lanthanide rare earth ion doping on trap depth from a trap regulation perspective offers a potential avenue for elucidating the nuanced processes underlying photostimulated luminescence.

Keywords:

• High temperature solid phase
• photostimulated luminescence
• long afterglow material
• trap regulation

Disclosure statement

No potential conflict of interest was reported by the author(s).