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ABSTRACT
In this study, we used a LC semiconductor, C8BTBT, solution (e.g. 0.1 wt % in heptane) for forming an organic semiconductor layer by casting method, and fabricated bottom-gate/bottom-contact type FETs. The FETs mobility was determined 0.17 cm2 V−1 s−1 which was comparable to that determined by time-of-flight technique in a sandwich type cell at room temperature. We have investigated the surface morphology and the influence of temperature variation on FET properties. The LC FET mobility was kept below 60°C and drastically decreased after heat stress above 100°C irreversibly.