About this journal

Aims and scope

Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.

Peer Review

All submitted manuscripts are subject to initial appraisal by the Editor, and if found suitable for further consideration, will be peer-reviewed by independent and anonymous expert referees.

CrossRef Similarity Check

Please note that Ferroelectrics uses CrossRef Similarity Check (Powered by iThenticate) to screen papers for unoriginal material. By submitting your paper to the journal you are agreeing to originality checks during the peer-review and production processes.

Journal metrics

Usage

  • 68K annual downloads/views

Citation metrics

  • 0.7 (2023) Impact Factor
  • 0.8 (2023) 5 year IF
  • 1.4 (2023) CiteScore (Scopus)
  • 0.289 (2023) SNIP
  • 0.205 (2023) SJR

Speed/acceptance

  • 56 days avg. from acceptance to online publication

Editorial board

Founding Editor and Emeritus Editor

George W. Taylor (Editor-in-Chief: 1992-2023)

Princeton Resources, P.O. Box 211

Princeton, New Jersey 08542-0211, USA

Editors

Carlos A. Paz de Araujo

Department of Electrical and Computer Engineering

University of Colorado

Colorado Springs, Colorado 80933-7150, USA

Deborah J. Taylor

Crawley Research Associates

3300 Bee Cave Road Suite 560-226

Austin, Texas 78746, U.S.A


Associate Editors

Orlando Auciello, Materials Science & Engineering, University of Texas-Dallas, Richardson, TX 75080

Yoshihiro Ishibashi, Professor Emeritus, Nagoya University, Nagoya, 466-0851, Japan

Ram Ramesh, Materials Research Science & Engineering, University of Maryland, College Park, MD 20742, USA

James F. Scott, Cavendish Laboratory, University of Cambridge

Tadashi Shiosaki, Graduate School of Materials Science, Nara Institute of Science and Technology, Nara 630-0101, Japan

Alexander S. Sigov Moscow Technological University (MIREA), Prospekt Vernadskogo 78, Moscow 117454, Russia

Wolfram Wersing, Corporate Research and Development, Siemens AG, Otto-Hahn-Ring 6, W-8000, Munchen 83 Germany


Review Articles Editor

Amar Bhalla, Department of Electrical & Computer Engineering, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA


Editorial Board

M. Adachi, Toyoma, Japan

C.L. Chen, San Antonio, Texas, USA

C.L. Choy, Kowloon, Hong Kong

M.W. Cole, Aberdeen, Maryland, USA

Hailin Cong, Qingdazo, China

S.K. Dey, Tempe, Arizona, USA

Duncinei Garcia, Sao Carlos, Brazil

A. Grekov, Rostov-on-Don, Russia

G.H. Haertling, Albuquerque, New Mexico, USA

R. Katiyar, San Juan, Puerto Rico

H.-G. Kim, Seoul, Korea

S.S. Kim, Kyungnam, South Korea

A.I. Kingon, Raleigh, North Carolina, USA

Hathaikarn Manuspiya, Bangkok, Thailand

T. Mihara, Tokyo, Japan

F.A. Miranda, Cleveland, Ohio, USA

Y. Miyasaka, Kawasaki, Japan

M. Noda, Osaka, Japan

M. Okuyama, Osaka, Japan

R. Panholzer, Monterey, California, USA

B. Ploss, Jena, Germany

Shashank Priya, Blacksburg, Virginia USA

Avadh, Saxena, Los Alamos, New Mexico, USA

N. Setter, Lausanne, Switzerland

M. Shimizu, Hyogo, Japan

V. Ya Shur, Ekaterinburg, Russia

R.P. Tandon, Delhi, India

M.A. Todd, Malvern, UK

Tatyana Volk, Moscow, Russia

Y. Watanabe, Fukuoka, Japan

R. Whatmore, Towcester, UK

W. Zhu, Singapore

Abstracting and indexing

Integrated Ferroelectrics is currently abstracted/indexed in:

  • EBSCOhost (various)
  • Elsevier BV
    Chimica
    Compendex
    Scopus
  • Genamics JournalSeek
  • OCLC
    ArticleFirst
    Electronic Collections Online
  • Ovid
    Inspec
  • Personal Alert (Email)
  • ProQuest (various)
  • The Engineering Index Monthly (DVD)
  • Clarivate Analytics
    Current Contents
    Science Citation Index Expanded
    Web of Science
  • World Ceramics Abstracts (Online)




Publication office: Taylor & Francis, Inc., 530 Walnut Street, Suite 850, Philadelphia, PA 19106

Open access

Integrated Ferroelectrics is a hybrid open access journal that is part of our Open Select publishing program, giving you the option to publish open access. Publishing open access means that your article will be free to access online immediately on publication, increasing the visibility, readership, and impact of your research.

Why choose open access?

  1. Increase the discoverability and readership of your article
  2. Make an impact and reach new readers, not just those with easy access to a research library
  3. Freely share your work with anyone, anywhere
  4. Comply with funding mandates and meet the requirements of your institution, employer or funder
  5. Rigorous peer review for every open access article

Article Publishing Charges (APC)

If you choose to publish open access in this journal you may be asked to pay an Article Publishing Charge (APC). You may be able to publish your article at no cost to yourself or with a reduced APC if your institution or research funder has an open access agreement or membership with Taylor & Francis.

Use our APC finder to calculate your article publishing charge

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