Abstract
The nanoscale growth control of oxide thin films, such as ferroelectric and magnetic materials, were explored by a novel technique based on nanoscale substrate engineering as well as atomic layer control via laser molecular beam epitaxy (laser-MBE). Atomic-scale analysis of the terminating layer of perovskite oxide films was performed by in situ coaxial impact-collision ion scattering spectroscopy. The novel heteroepitaxies that could be attained were: (1) the termination-regulated molecular layer-by-layer epitaxy of BaTiO3 and La0.7Sr0.3MnO3 thin films and (2) the step-decoration epitaxy resulting in the nanowire or nanodot structures of magnetic oxides such as (Mn, Zn) ferrite on ultrasmooth sapphire substrates with straight atomic steps.