![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Abstract
The thermal oxidation of silicon is generally modelled by Deal and Grove's theory based on the assumption that the oxygen molecules dissolve in silicon in interstitial positions and migrate to the Si-SiO2 interface where they react with the silicon substrate. Experimental results for oxidation in dry oxygen agree with this theory only for thick oxide films. The growth of very thin oxide films exhibits particular features which are discussed in this paper. For these films, the growth mechanism is different from that of thick films; this difference is possibly associated with the transport of oxygen atoms through the silica network. The effect of hydrogenated impurities is also discussed.
