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Abstract
The present paper reviews the results of experimental investigations of the photodoping of amorphous chalcogenides by metals, and in particular by silver. The kinetics of the photodissolution of the metal are described as also is the influence on the photodissolution rate of such factors as the wavelength and intensity of light, the composition and temperature of the semiconductor, and an external electric field. A separate section describes lateral diffusion. The properties of photodoped semiconductors (electrical, optical, photoelectric, etc.) are presented. The results in the literature are analysed, giving answers to such fundamental questions as the following.
Where is the actinic light which is efficient for the photodissolution absorbed? | |||||
Which is the diffusion-limiting step? | |||||
What is the state of the diffusing species (neutral atoms or ions)? | |||||
The dissolution of silver induced by electron or ion beams and the photodissolution of group II metals are mentioned. The experimental results are followed by a section on models for the photodissolution process with a detailed consideration of the processes at the metal-semiconductor boundary, the transport of the metal through the doped layer and the penetration of the metal species into the undoped semiconductor. Electronic processes at the doped-undoped chalcogenide interface are considered. The review is concluded by a section devoted to practical applications of the photodissolution process.
