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Section x: Doping, defects and induced phenomena

Influence of conductivity on BaTiO3 crystals phase transitions : A dilatometric study

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Pages 381-387 | Received 12 Jul 1999, Published online: 26 Oct 2011
 

Abstract

The 3m ⟺ mm2 ⟺ 4mm ⟺ m3m phase transitions in BaTiO3 etched dielectric and non-etched semiconducting crystals have been studied by the dilatometry and the acoustic emission simultaneously. In contrast to ceramics the dilatometric curves in the crystals studied have the form of the dosed hysteresis loops. The hysteresis loop area = temperature hysteresis x thermal expansion coefficient is shown to be a useful parameter for characterizing the phase transition. The differences in the hysteris loop areas between dielectric and semiconducting crystals are likely to be attributed to the additional energy expenditure on phase transition in defect surface layers present on the non-etched semiconducting crystals.

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