Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O₃ thin films

M. P. Moret University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

S. A. Rössinger University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

P. R. Hageman University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

M. A. Devillers University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

H. Van Der Linden University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

E. Haverkamp University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

P. K. Larsen University of Nijmegen, Research Institute of Materials, Toernooiveld 1, 6525ED, Nijmegen, The Netherlands

N. Duan University of Twente, Inorganic Materials Science Group, Enschede, The Netherlands

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Abstract

Polycrystalline Pb(Zr, Ti)O₃ thin films have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) technique. The characterization of 200 nm thick polycrystalline Pb(Zr, Ti)O₃ thin films on 6 inch diameter Pt/Ti/SiO₂/Si substrates is reported. XRD reveals good crystalline structure with respect to powder standards. Ellipsometry indicates an interface layer due to substrate roughness induced by the heating-up procedure prior to growth. Ellipsometry is a good tool to evaluate the quality of the grown thin films and the thickness of this observed interfacial layer.

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Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O₃ thin films

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Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O₃ thin films