Pyroelectric properties of Pb0.9La0.1TiO3 (PLT(10)) thin films on p-doped poly silicon

Pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode have been studied by using the static measurement method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the figures of merit, FV and FD at room temperature are measured as 5.76×10-4C/m2K, 1.17×10-10C.cm/J and 0.93×10-8C.cm/J, respectively.

Keywords:

• pyroelectric detector
• PLT
• p-doped poly silicon
• curie temperature
• pyroelectric coefficient
• figure of merit