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Abstract
A structural planar defect in the SBT film with 10 mol% excess bismuth grown on Pt/TiO2/SiO2/Si substrates by metalorganic deposition has been observed by means of high-resolution electron microscopy. It was found that the stacking defect was an isolated defect with extra inserted Bi-O planes normal to the c axis. This structural defect is expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra inserted Bi-O planes within the structural defect having higher structural flexibility and alleviating the mechanical stresses and strains, as well as injected-charge problems.