Effect of Cu₂V₂O₇ on the microwave dielectric properties of BiTaO₄ ceramics

Abstract

Microwave dielectric properties of BiTaO₄ were investigated as a function of Cu₂V₂O₇ content and sintering temperature. The orthorhombic single phase of BiTaO₄ was obtained for the specimens with the change of Cu₂V₂O₇ content as well as the change of sintering temperature. Dielectric constant showed constant value, while the Qf value was remarkably decreased with the Cu₂V₂O₇ content. Specimens sintered at 775°C to 850°C with 0.8wt.% Cu₂V₂O₇, had no secondary phase. Dielectric constant slightly increased with the increase of the sintering temperature and Qf value drastically increased up to sintering temperature of 800°C, then decreased. BiTaO₄ with 0.8wt.% Cu₂V₂O₇ sintered at 800°C for 3h showed good dielectric properties with dielectric constant(K) of 44, and loss quality(Qf) of 15200GHz.

Key Words:

• BiTaO₄
• Cu₂V₂O₇
• sintering temperature
• loss quality