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Abstract
Pb(Zr, Ti)O3 (PZT) and Pb(Zr, Ti, Nb)O3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zr/Ti compositions ranging from 15/85 to 70/30 were grown; for PNZT films (the ratio Zr/Ti is fixed to 54/46) the Niobium concentration varied from 1 to 7 at.% by increment of 1 at.%.
The main objective of this work is to determine the effects of the Zr/Ti ratio and the Nb concentration on the electrical properties of PZT thin films. The dielectric, ferroelectric and piezoelectric properties of the films were systematically evaluated. In particular, the piezoelectric properties were very sensitive to the Nb substitution and the Zr/Ti ratio.