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Ferroelectrics Volume 261, 2001 - Issue 1
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Session C: Relaxor ferroelectrics

The growth and electrical properties of ferroelectric (Bi3.25 La0.75) Ti3O12 thin films for metal-ferroelectric-insulator-semiconductor

Taekjib Choi Department of Materials Engineering, Sung Kyun Kwan University Suwon, 440-746, Korea
,
Youngsung Kim Department of Materials Engineering, Sung Kyun Kwan University Suwon, 440-746, Korea
&
Jaichan Lee Department of Materials Engineering, Sung Kyun Kwan University Suwon, 440-746, Korea
Pages 131-137 | Received 03 Aug 2001, Published online: 25 Oct 2011
 
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Abstract

Ferroelectric (Bi3.25La0.75)Ti3O12 (BLT) thin films were prepared on SiO2/Si (100) and yttria-stabilized zirconia (YSZ) buffered SiO2/Si (100) substrates by pulsed laser deposition (PLD) method for metal-ferroelectric-insulator-semiconductor (MFIS) structure. BLT films had polycrystalline nature with the crystallization behavior sensitively influenced by the substrate temperature. Transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) revealed that there was no inter-diffusion at the interface of the BLT thin films grown at as low as 620°C. Memory window of BLT films is about 0.8V at sweep voltage of 5V. The above results show that BLT thin films can be applied to the MFIS structure as a ferroelectric layer.

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