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Session D: Crystals and ceramics

Crystal growth and electrical properties of high-Tc relaxor-PT system single crystals

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Pages 205-212 | Received 03 Aug 2001, Published online: 25 Oct 2011
 

Abstract

Single crystals of the xPb(Sc1/2Nb1/2)O3-yPb(Zn1/3Nb2/3 O3-zPbTiO3 (PSZNT 100x/100y/100z) and aPb(In1/2Nb1/2)O3-bPb(Zn1/3Nb2/3)O3-cPbTiO3 (PIZNT 100a/100b/100c) ternary systems. have been synthesized by a flux method using PbO flux. The crystals were grown in a Pt crucible by a mass crystallization, achieved by slow cooling of the 55PbO-45PSZNT 10/75/15 (mol%) molten solution with 1.5–3°C/h from 1,230–1,250°C to 850°C. The resulting crystals are 2–5 mm in length transparent perovskite. The PSZNT 10/75/15 single crystal near the morphotropic phase boundary, showed a room temperature dielectric constant of 2,800. A maximum dielectric constant leached to 23,000 at 216°C. Further more, higher Tc of 222°C was obtained for the PIZNT 10/77/13 single crystals.

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