High temperature piezoelectric ceramics Bi 4 Ti 3 O 12 doped with 5 at% WO 3 (BIT-W) were prepared by using different doping routes. Ceramic powders of undoped BIT were prepared by a chemical coprecipitation method. The doping route used modified the sintering behavior and lattice constants of BIT and different microstructures were achieved. Dielectric properties and ac electrical conductivity of the different BIT-based ceramics were studied. An exponential relation between the ac electrical conductivity and the aspect ratio (l/t) of the plate-like grains was observed in undoped and W 6+ doped piezoelectric ceramics.
Modulation of Electrical Conductivity Through Microstructural Control in Bi 4 Ti 3 O 12 -Based Piezoelectric Ceramics
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