Far-Infrared and Raman Spectroscopy of BaTiO₃ Thin Films

T. OSTAPCHUK Institute of Physics Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic, 8

J. PETZELT Institute of Physics Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic, 8

J. POKORNÝ Institute of Physics Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic, 8

A. PASHKIN Institute of Physics Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic, 8

V. ŽELEZNÝ Institute of Physics Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic, 8

M. DRESSEL Physikalisches Institut Universität Stuttgart, D-70550, Stuttgart, Germany

B. GORSHUNOV Physikalisches Institut Universität Stuttgart, D-70550, Stuttgart, Germany

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Abstract

Three BaTiO₃ films of different thicknesses and way of preparation on (0001)-oriented sapphire substrate were studied by means of far infrared and micro-Raman spectroscopy in the 10–520 K temperature interval. The data allowed us to evaluate the complex dielectric function of the films in the 20–300 cm⁻¹ frequency range and discuss their phase transitions and lattice dynamics.

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Far-Infrared and Raman Spectroscopy of BaTiO₃ Thin Films

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Far-Infrared and Raman Spectroscopy of BaTiO₃ Thin Films