Alignment Effects for Nematic Liquid Crystal Using a-C:H Thin Film as Working Gas at Bias Condition

J.-Y. HWANG Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong Seodaemoon-ku, Seoul, Korea, 120-749

C.-J. PARK Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong Seodaemoon-ku, Seoul, Korea, 120-749

D.-S. SEO Department of Electrical & Electronic Engineering College of Engineering Yonsei University, 134 Shinchon-dong Seodaemoon-ku, Seoul, Korea, 120-749

H.-J. AHN Department of Metallurgical System Engineering College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749

K.-C. KIM Department of Metallurgical System Engineering College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749

H.-K. BAIK Department of Metallurgical System Engineering College of Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul, Korea, 120-749

Abstract

We investigated the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30 W rf bias condition. A high pretilt angle by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250°C, and the alignment defect was observed above annealing temperature of 300°C.

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Acknowledgements

This work was supported by National Research Laboratory program (M1-0203-00-0008).

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Alignment Effects for Nematic Liquid Crystal Using a-C:H Thin Film as Working Gas at Bias Condition

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Alignment Effects for Nematic Liquid Crystal Using a-C:H Thin Film as Working Gas at Bias Condition

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