Effect of Annealing and Quenching on the Dielectric Behaviour of the Valence Compensated Solid Solution (Sr_{1 −x}Y_xTi_{1 −x}Co_xO₃, 0.01 ≤ x ≤ 0.10)

Chandkiram Gautam School of Materials Science & Technology, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

Ashok Kumar Sahu Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

Prakash Singh Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

Om Parkash Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

Devendra Kumar Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India

A few compositions in the system Sr_{1 − x}Y_xTi_{1 − x}Co_xO₃ have been prepared by solid-state ceramic method. One set of samples was quenched directly from the sintering temperature. Another set was furnace cooled to 1000°C and annealed in air for 12 hours and then furnace cooled to room temperature. Dielectric behaviour of both these sets of samples has been studied in the temperature range 300–500 K to see the effect of processing i.e. annealing and quenching on the dielectric behaviour.

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Acknowledgments

The authors are grateful to Department of Science and Technology, Government of India, New Delhi for financial support during these investigations.

Paper originally presented at AMF-4, Bangalore, India, December 12–15, 2003

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Effect of Annealing and Quenching on the Dielectric Behaviour of the Valence Compensated Solid Solution (Sr_{1 −x}Y_xTi_{1 −x}Co_xO₃, 0.01 ≤ x ≤ 0.10)

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Effect of Annealing and Quenching on the Dielectric Behaviour of the Valence Compensated Solid Solution (Sr1 −xYxTi1 −xCoxO3, 0.01 ≤ x ≤ 0.10)

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Effect of Annealing and Quenching on the Dielectric Behaviour of the Valence Compensated Solid Solution (Sr_{1 −x}Y_xTi_{1 −x}Co_xO₃, 0.01 ≤ x ≤ 0.10)