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SECTION D: MICROWAVE DIELECTRICS

Raman Spectroscopic Evaluation and Microwave Dielectric Property of Order/Disorder and Stoichiometric/Non-Stoichiometric Ba(Zn1/3Ta2 /3)O3

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Pages 146-152 | Received 03 Sep 2006, Accepted 30 Sep 2006, Published online: 10 Oct 2011
 

Abstract

The phonon vibrations, crystal phases, lattice defects and Q factors of stoichiometric Ba(Zn1/3Ta2/3)O3 (BZT) and non-stoichiometric BZT were studied. The significant Q factor decrement and the change of the phonon vibration were simultaneously observed in the non-stoichiometric disordered BZT formed in Ba-rich region. The Q factor decrement in the non-stoichiometric disordered BZT can be attributed to the change of A 1g (O) mode. These results suggest that the lattice defects (B site vacancy and oxygen vacancy) formed by excessive Ba should play an important role in the phonon vibration and Q factor of BZT. On the contrary, in the case of the stoichiometric BZT, the ionic vibrations detected by Raman scattering were independent of the crystal-structural ordering and microwave Q factor.

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