13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

Ichirou Takahashi New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Masaki Hirayama New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Yasuyuki Shirai New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Akinobu Teramoto New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Shigetoshi Sugawa Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Tadahiro Ohmi New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan

Abstract

We have formed ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) film by using our developed 13.56 and 100 MHz coupled mode rf-sputtering system. For forming ferroelectric STN [perovskite Sr₂(Ta_{1 − x},Nb_x)₂O₇ phase], Ta and Nb are oxidized to a pentad, i.e., (Ta_{1 − x},Nb_x)₂O₅ needs to be formed. The oxidations of Ta and Nb to pentad are difficult, because their ionization energies are very large. This means that oxygen vacancies exist in the films. We have successfully formed STN film whose oxygen vacancies are reduced by the coupled mode rf-sputtering system.

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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1 − x,Nbx)2O7 (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

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13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr₂(Ta_{1 − x},Nb_x)₂O₇ (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory