Abstract
Epitaxial ferroelectric/antiferroelectric PbZr 0.8 Ti 0.2 O 3 /PbZrO 3 multilayers were grown on SrTiO 3 (100) substrates, covered with a SrRuO 3 (100) bottom electrode and a thin tetragonal PbZr 0.2 Ti 0.8 O 3 buffer layer, using pulsed laser deposition. Polarization-field, switching current-voltage and capacitance-voltage curves show a mixed antiferroelectric-ferroelectric behavior of the multilayers with an individual layer thickness above 10 nm, but below 10 nm the multilayers show only ferroelectric behavior. Obviously the PbZrO 3 layers thinner than 10 nm underwent a transition into the ferroelectric state. An X-ray diffraction θ -2θ scan showed a corresponding orthorhombic-to-rhombohedral transition of the PbZrO 3 layers. The observations are discussed in terms of a strain effect.
Acknowledgments
Thanks are due to M. A. Schubert for help with some XRD measurements. One of the authors (I. B. M.) thanks the Alexander von Humboldt Foundation for funding.