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Abstract
In this work, the experimental results of pyroelectric and photovoltaic responses of semiconductor-ferroelectric Sn2P2S6 films are presented for both preliminary polarized samples and films under external electric field. The measurements were carried out in short-circuit conditions under illumination of the Al/Sn2P2S6/Al structure by modulated laser light with λ = 6328 Å. It is shown that varying the intensity of monochromatic laser irradiation by focusing enables to separate the pyroelectric and photovoltaic responses of ferroelectric semiconductors.
Acknowledgments
This work was partially supported by the Russian Foundation for Basic Research (project No. 08-02-92006 NNS-a).