Structural, Dielectric and Ferroelectric Properties of Ti-Modified 0.72BiFeO₃–0.28PbTiO₃ Multiferroic Thin Films Prepared by Pulsed Laser Deposition

Abstract

Ti-modified 0.72BiFeO₃–0.28PbTiO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal (001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 μC/cm², respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680°C.

Keywords:

• Ti modified 0.72BiFeO₃–0.28PbTiO₃ thin films
• Pulsed laser deposition
• Dielectric and ferroelectric properties

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grants Nos. 50728201 and U0634006) and the Shaanxi Province International Collaboration Program (Grant No. 2009KW-12), the Natural Science and Engineering Research Council of Canada (NSERC), and the U.S. Office of Naval Research.