HfO₂-TiO₂ Ultra-Thin Gate Dielectric by RF Sputtering

G. X. Li Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China

X. F. Chen Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China; Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798

W. Ren Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China

P. Shi Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China

X. Q. Wu Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China

O. K. Tan Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798

W. G. Zhu Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798

X. Yao Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China

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Abstract

High-K HfO₂-TiO₂ ultra-thin films with sub-nanometer laminate HfO₂/TiO₂ stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO₂, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO₂. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 × 10⁻⁸ A/cm² at 1 V.

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Acknowledgment

This work is supported by Xi'an Applied Materials Innovation Fund (XA-AM-200717) and the National Natural Science Foundation of China (Grant No. 90923001).

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HfO₂-TiO₂ Ultra-Thin Gate Dielectric by RF Sputtering

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HfO₂-TiO₂ Ultra-Thin Gate Dielectric by RF Sputtering