Nanoscale Probing of High Photovoltages at 109° Domain Walls

J. Seidel Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Department of Physics, University of California, Berkeley, USA; School of Materials Science & Engineering, University of New South Wales, Sydney, Australia

S.-Y. Yang Department of Materials Science and Engineering, University of California, Berkeley, USA

E. Alarcón-Lladó Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland

J. W. Ager III Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA

R. Ramesh Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA; Department of Physics, University of California, Berkeley, USA; Department of Materials Science and Engineering, University of California, Berkeley, USA

Abstract

We report the direct observation of nanoscale photovoltaic current-voltage properties associated with directional steps of the electrostatic potential at 109° domain walls in ferroelectric BiFeO₃ thin films with highly ordered ferroelectric stripe domains. The unidirectional photovoltaic effect along the net-in-plane polarization direction is shown to exhibit anomalies at the micro- and nanoscale due to local differences in mesoscopic domain structure. Very high initial photovoltages for small electrode spacings are observed using a conductive AFM tip as one of the electrodes in photovoltaic I-V measurements.

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Nanoscale Probing of High Photovoltages at 109° Domain Walls

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Nanoscale Probing of High Photovoltages at 109° Domain Walls

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