Electrical Conduction Mechanisms in PZT Thin Films Deposited by RF Magnetron Sputtering Method

M. V. Kamenshchikov Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia

A. V. Solnyshkin Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia; National Research University of Electronic Technology “MIET”, 124498, Zelenograd, Moscow, Russia

A. A. Bogomolov Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia

I. P. Pronin Ioffe Physical Technical Institute RAS, 194021 St, Petersburg, Russia

Abstract

The study of conductivity of thin film capacitor structures on the basis of PZT was carried out. The obtained asymmetry of I-V characteristics showed the distinction of potential barrier height on interfaces of the Pt/PZT/Pt heterostructures, which changed depending on synthesis conditions. Time dependences of the electric current on DC voltage were investigated. Two main mechanisms of conductivity: Ohmic and Poole-Frenkel emission were revealed.

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Acknowledgments

This work was supported by the Russian Federation Ministry for Education in the framework of Science's program Scientists and Science Teachers of an Innovative Russia for 2009–2013.

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Electrical Conduction Mechanisms in PZT Thin Films Deposited by RF Magnetron Sputtering Method

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Electrical Conduction Mechanisms in PZT Thin Films Deposited by RF Magnetron Sputtering Method

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