Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

Chih-Yi Liu Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 80778, Taiwan, R.O.C.; Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 70101, Taiwan, R.O.C.

Chao-Han Lin Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 80778, Taiwan, R.O.C.

Jyun-Jie Huang Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 80778, Taiwan, R.O.C.

Jen-Yen Ho Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 80778, Taiwan, R.O.C.

Abstract

A Pt/NiO/Pt device was fabricated to investigate the transient current during the resistive switching process. A large transient current flows through the device, which leads to current damage and switching dispersion. The real transient current through the device is disturbed by the measurement method. Therefore, a circuit model of the measurement system was adopted to simulate the transient current. The transient currents were simulated to evaluate the influence of load resistance, system capacitance, device capacitance, and device resistance. The load resistance only slightly decreases the device current. The device current can also be reduced by changing the device resistance. The simulation results provide a guideline for the device design to reduce the transient current during the resistive switching process.

Acknowledgments

The authors thank the National Science Council of R.O.C. for financial support under project No. NSC 101-2221-E-151-044 and the facility support from National Nano Device Laboratories.

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Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

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Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit

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