Abstract
Oxygen deficient KTaO3 thin films were grown by RF magnetron sputtering on Si/SiO2/Ti/Pt substrates. Room temperature X-ray diffraction shows that they are under a compressive strain of 2.3%. Leakage current results reveal the presence of a conductive mechanism, following Poole-Frenkel formalism. The existence of a polar response below Tpol ∼ 367°C was ascertained by dielectric, polarization, and depolarization current measurements. A Cole-Cole dipolar relaxation was evidenced which is associated with oxygen vacancies induced dipoles. After annealing the films in an oxygen atmosphere above Tpol, the aforementioned polar response is suppressed, due to significant oxygen vacancies reduction.