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Ferroelectrics Volume 481, 2015 - Issue 1
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Articles

Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric–Semiconductor

МirHasan Yu. SeyidovDepartment of Physics, Gebze Institute of Technology, 41400, Gebze, Kocaeli, Turkey;Institute of Physics of NAS of Azerbaijan, H. Javid av., 33, AZ-1143, Baku, AzerbaijanCorrespondence[email protected]
,
Rauf A. SuleymanovDepartment of Physics, Gebze Institute of Technology, 41400, Gebze, Kocaeli, Turkey;Institute of Physics of NAS of Azerbaijan, H. Javid av., 33, AZ-1143, Baku, Azerbaijan
,
Ertan BalabanDepartment of Physics, Gebze Institute of Technology, 41400, Gebze, Kocaeli, Turkey;TUBITAK-BILGEM, Scientificand Technical Research Council of Turkey, Gebze, Kocaeli41470, Turkey
&
Yasin ŞaleDepartment of Physics, Gebze Institute of Technology, 41400, Gebze, Kocaeli, Turkey
Pages 77-88 | Accepted 31 Oct 2014, Published online: 01 Sep 2015
 
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Abstract

In this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2 ferroelectric – semiconductor with incommensurate (INC) - phase are presented. The aim is to show that electrical and open circuit photovoltage measurements can be effectively used for the study of memory effect of INC – structure in TlGaSe2.

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