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Abstract
Dielectric relaxations of Ba0.4Sr0.6(Fe0.5Nb0.5)O3 (BSFN) ceramics were investigated. Two dielectric relaxations with strong frequency dispersion and following the Arrhenius law were detected in low and high temperature ranges, respectively. The low temperature dielectric relaxation was proposed to originate from the electronic ferroelectricity and the high temperature dielectric relaxation was attributed to the defect ordering. The formation mechanism of the giant dielectric constant step was just a competing balance result of the low- and high-temperature dielectric relaxations.
Funding
The present work was supported by National Science Foundation of China (51372144, 51102159), the Special Foundation of Educational Department of Shaanxi Province (14JK1080), the Scientific Research Foundation for PhD (BJ10-16), the Academic Backbones Cultivation Program (XS11-02) and Graduate Innovation Fund of Shaanxi University of Science and Technology.