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Abstract
Zinc telluride thin films were deposited by thermal evaporation method on n-type Si substrate. The electrical properties of these films were investigated with special emphasis on the effects of a depositing temperature from 520°C to 560°C with various annealing temperatures by rapid thermal annealing (RTA) technique. Structural analysis through X-ray diffraction (XRD) was sensitive to the deposition conditions and annealing treatment. Crystallinity, carrier concentration, sheet resistance, resistivity and mobility are shown to be dependent on the thermal treatments.
Funding
This work was supported by the National Science Council of the Republic of China under grant NSC 102-2622-E-239-007-CC3.