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ABSTRACT
PbTiO3 (PTO) thin film was deposited on a Si-based pn-junction to form a ferroelectric-pn junction structure (PTO/pn cell). It exhibits a coupling photovoltaic property. Voc of the PTO/pn cell is approximately equal to Voc summation of single pn-junction structure (pn cell) and single PTO films (PTO cell). Isc and internal quantum efficiency of the PTO/pn cell are much higher than that of the PTO cell. Photovoltaic properties of the PTO/pn cell can be tuned by controlling the direction of the polarization voltage applied on the cell. Reasons for the tuning and enhanced photovoltaic properties are analyzed.
Acknowledgments
The work were supported by the scientific research foundation of Mianyang Normal University(QD2013A07) and the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials (Southwest University of Science and Technology, No. 12zxfk15),China. We wish to thank the analytical and testing center in the Southwest University of Science and Technology for help with the SEM and XRD test. We would like to thank Prof. Guanggen Zeng and Dr. Wenwu Wang in the College of Materials Science and Engineer of Sichuan University and Chengdu Green Energy and Green Manufacturing Technology R&D Center for their help in the measurement of photovoltaic properties.
