Abstract
We investigate the properties of quasi-two-dimensional electron gas (q2DEG) at the interface between ferroelectric oxide and insulating oxide in Ba0.8Sr0.2TiO3/LaMnO3 heterostructure. The influence of light on the electrical resistance of this heterostructure has been studied. It is found that in the samples with the film with ferroelectric polarization axis directed perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The transition to the state with q2DEG at the interface is demonstrated. It is shown that the resistivity of the interface BSTO/LMO decreases under illumination by ultraviolet light.