Microstructure and electrical response of thin SiC films on Si substrates of p- and n-types

Abstract

In this work, the electrical properties of SiC epitaxial films grown on single-crystalline silicon substrates with conductivity of n- and p-types were studied. It was shown that the electric response of these films to light irradiation in the wavelength range 400–980 nm had a photovoltaic nature. The photon energy of the irradiation was smaller than the energy gap of silicon carbide. The mechanisms of this effect are discussed.

Keywords:

• SiC/Si heterostructures
• photovoltaic response
• heterojunction

Acknowledgments

The work was partly supported by the Ministry for Education and Science of Russian Federation (Grant No 16.2811.2017/4.6).