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Abstract
The electrical and magnetic properties of Mn-doped GaN were investigated by the density functional theory of spin polarization. The results indicate that Mn-doped GaN is still a direct bandgap semiconductor, and the bandgap width increases with the increase of Mn content. The N 2p and Mn 3d orbital were hybridized, which produce the spin polarization impurity bands, and the spin up the band to occupy the Fermi surface. The Ga1-xMnxN exhibits the semi-metallic ferromagnetism, which is suitable for spin injection. With the increase of Mn doping concentration, the semi-metallic properties of the system are enhanced. The studied results show that Mn-doped GaN can be applied as the ideal spin electronic material.
Additional information
Funding
This work is supported by the National Natural Science Fund of China (61664008), the Fundamental Capability Promotion Funds for Middle-aged and young teachers of Guangxi colleges and universities Project, China (2017KY0831), the Special Research Funds for Discipline Construction of High Level University Project (2015SXTS02), the Scientific and Technological Innovation Team (2017CXTD-01), the project of production, learning and research cooperation (2017cxy05), the Natural Science Foundation of Shaanxi province (2017JM6102) and the Scientific Research Funds of Guangxi Normal University for Nationalities (2016QN002).