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Abstract
ITO/BNT/Pt heterojunction structure has been prepared by sol-gel method combined with dc magnetron sputtering. The BNT (Bi3.15Nd0.85Ti3O12) films were polycrystalline with typical ferroelectric hysteresis. The ITO/BNT/Pt structure displayed photovoltaic properties with a Voc of about 0.28 V and a photocurrent of 2.4 nA. After being polarized by a + 4 V pulse, at the voltage of 0.1 V, the current was 3 × 10−8 A, while it was −1 × 10−9 A after being polarized by a −4 V pulse. This demonstrated the depolarization field of the BNT films played a significant role in the I–V properties of the ITO/BNT/Pt structure. Therefore, we speculated the depolarization field had influenced the photovoltaic properties.
Additional information
Funding
This work is supported by the National Natural Science Foundation of China (Grant No. 51702089), the Program of Henan Polytechnic University (Grant Nos. NSFRF140116, B2014-020), the Program of Henan Province Office of Education (Grant No. 19B510004) and the Key Project of Scientific and Technology Research of Henan Province (Grant No. 182102410047).