Abstract
A novel perovskite La0.86Cu3Ti3.42Al0.58O12 (LCTAO) ceramic was fabricated by a conventional solid-state method, and the dielectric property was systematically investigated. Pure phase with a body-centered cubic structure was confirmed by X-ray diffraction. High dielectric permittivity was performed in wide temperature and frequency ranges. Impedance spectroscopy analysis demonstrated microstructure was electrically heterogeneous, which resulted in a giant dielectric response based on the internal barrier layer capacitor (IBLC) model. The results of X-ray photoelectron spectroscopy indicated the active electron hopping process of the mixed-valence states charge carriers, i.e. Cu+/Cu2+, Ti3+/Ti4+, may be responsible for the semiconduction of grains.