Dependence of metal gate work function variation for various ferroelectric thickness on electrical parameters in NC-FinFET

Abstract

We have reported the impact of work function variability (WFV) of TiN metal gate on the variation in electrical parameters for negative capacitance FinFET (NC-FinFET) through TCAD simulator. It is found that as the thickness of ferroelectric layer (t_FE) increases, the fluctuation in electrical parameters like threshold voltage (σV_T), subthreshold swing (σSS), on current (σI_on), and off current (σI_off) are decreases at different average grain size ($\overline{\Phi }$). However, the increase in $\overline{\Phi }$ leads to more fluctuation in electrical parameters. It is also observed that the distribution of electrical parameter is close to normal for small $\overline{\Phi }$ and bounded for large $\overline{\Phi }.$

Keywords:

• Ferroelectric layer
• FinFET
• grain orientation
• negative capacitance
• work function variability