Lattice dynamics and dielectric characteristics of c-oriented SBN-50 thin films grown on a Pt(111)/Al₂O₃(0001) substrate

Abstract

The lattice dynamics and dielectric properties of Ba_0.5Sr_0.5Nb₂O₆ ferroelectric thin films grown by high-frequency RF-deposition in an oxygen atmosphere on a Pt(111)/Al₂O₃ substrate (c - cut) were studied. It has been established that in the film, in comparison with the bulk material, the transition temperature from the ferroelectric to the paraelectric phase increases. Dielectric spectroscopy data have shown that the Ba_0.5Sr_0.5Nb₂O₆/Pt/Al₂O₃ heterostructure exhibits the behavior of a ferroelectric relaxor. The detected Burns temperature, T_b, is 180-190 °C.

Keywords:

• Dielectric characteristics
• ferroelectric-relaxor
• barium-strontium niobate
• Raman spectroscopy
• SBN

Additional information

Funding

The work was carried out within the framework of the state task of the Ministry of Science and Higher Education of the Russian Federation for Southern Scientific Center Russian Academy of Science number 122020100294-9; and the state task for Institute of Physics of the Southern Federal University number GZ0110/22-01-EP.