30 GHz ferroelectric phase shifter on silicon carbide

Abstract

Thin ferroelectric barium-strontium titanate (BST) films of high structure quality have been grown on semi-insulating silicon carbide substrates. The crystal structure and elemental composition of the obtained films were studied by the X-ray diffraction and Medium Energy Ions Scattering. Planar capacitors based on these BST films reveal the combination of high tunability and low losses at microwaves. 30 GHz ferroelectric phase shifter demonstrating a figure of merit of 22 deg/dB with a phase shift of Δϕ = 220 deg is implemented based on BST films on silicon carbide substrate.

Keywords:

• Ferroelectrics
• barium strontium titanate
• silicon carbide
• ion plasma deposition
• microwave phase shifter

Additional information

Funding

This work was supported by the Ministry of Science and Higher Education of Russian Federation under Grant No. 075-01438-22-07 – FSEE-2022-0015.