Modified BBFTO ceramic oxide with high dielectric constant and low loss-tangent for possible electronic applications

Abstract

In this report, a complex barium titanate ceramic oxide of the form BaBi_1.6Fe_0.4TiO₆ was prepared by the solid-state casting process. More Bi³⁺ percentage was selected to boost the dielectric and ferroelectric effects, while lowering the Fe³⁺ content could minimize the leakage current and consequently, the dielectric loss (tanδ). The X-ray diffraction (XRD) data suggests an establishment of monoclinic distortion (P21/c) of smaller mean crystallite size (∼40 nm) using the Debye-Scherrer formula. The compound exhibits dielectric values, such as ɛ_r ∼ 771, and relatively low loss, tanδ ∼ 0.017 at the ambient experimental conditions. Thus, the material can be incorporated into different electronic devices where higher dielectric constant and lower losses are essential, for example, multi-layered ceramic capacitors, transmission lines, and gate dielectrics. The AC-conductivity essence of the compound follows Jonscher’s power law as well as Arrhenius relation. The PE hysteresis loop was traced at different conditions with a function of the incident electric field in the ambient atmospheric conditions. The outcome of this study revealed that the material has remanent polarization hence suggesting a ferroelectric effect with less hysteresis loss; therefore, it could be useful in memory storage devices.

Keywords:

• Dielectric constant
• tangent loss
• ferroelectricity
• Jonscher power law
• perovskite

Disclosure statement

I declare that the present manuscript has not been submitted anywhere and acknowledge the entire researcher directly or indirectly involved in the research article. This manuscript is not associated with any type of conflict of interest.