Slow crystallization process from amorphous PbTiO₃

Masaaki Takashige The Institute for Solid State Physics, The University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo, 106, Japan

Terutaro Nakamura The Institute for Solid State Physics, The University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo, 106, Japan

Yutaka Aikawa The Institute for Solid State Physics, The University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo, 106, Japan

Min Su Jang The Institute for Solid State Physics, The University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo, 106, Japan

Abstract

The effect of isothermal annealing of amorphous PbTiO ₃ at a temperature below the crystallization temperature, T _crys, has been investigated. Time dependent dielectric constant in the annealing process has been observed. From the experimental results, both the existence of the glass transition temperature, T _g, and the steadiness of dielectric constant at room temperature have been established

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Slow crystallization process from amorphous PbTiO3

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Slow crystallization process from amorphous PbTiO₃