Abstract
The switching characteristics of CsH2PO4 in the ferroelectric phase below -120°C were measured. The electric field dependence of the reciprocal switching time and the peak switching current consists of two parts; the linear part in the high-field region and the curved part in the low-field region. The mobility of domain wall motion of CsH2PO4 below -120°C is as much as that of BaTiO3 and TGS at room temperature.